Yoshiji Horíkoshi: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

Optical properties of AlxGa1−xAs/GaAs superlattice solar cells

Kuramoto, Makoto, Urabe, Hiroyuki, Nakano, Tomohiro, Kawaharazuka, Atsushi, Nishinaga, Jiro, Makimoto, Toshiki, Horikoshi, Yoshiji

Journal:

Journal of Crystal Growth

Year:

2015

Language:

english

File:

PDF, 585 KB

english, 2015

2

MBE growth of GaN on MgO substrate

Ryotaro Suzuki, Atsushi Kawaharazuka, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 826 KB

english, 2007

3

Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy

Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1999

Language:

english

File:

PDF, 388 KB

english, 1999

4

Epitaxial growth of III–V compound semiconductor thin films and their device applications

Yoshiji Horikoshi

Journal:

Progress in Crystal Growth and Characterization of Materials

Year:

1992

Language:

english

File:

PDF, 3.05 MB

english, 1992

5

Surface structure transitions on InAs and GaAs (001) surfaces

Yamaguchi, Hiroshi, Horikoshi, Yoshiji

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 5.53 MB

english, 1995

6

Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells

Yamaguchi, Hiroshi, Kanisawa, Kiyoshi, Horikoshi, Yoshiji

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 126 KB

english, 1996

7

Surface-defect formation on heavily doped InAs and GaAs layers studied by scanning tunneling microscopy

Yamaguchi, Hiroshi, Horikoshi, Yoshiji

Journal:

Physical Review B

Year:

1996

Language:

english

File:

PDF, 324 KB

english, 1996

8

Flow-rate modulation epitaxy of GaAs and AlGaAs

Kobayashi, Naoki, Makimoto, Toshiki, Yamauchi, Yoshiharu, Horikoshi, Yoshiji

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 1.65 MB

english, 1989

9

Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperature

Horikoshi, Yoshiji, Kawashima, Minoru, Yamaguchi, Hiroshi

Journal:

Applied Physics Letters

Year:

1987

Language:

english

File:

PDF, 399 KB

english, 1987

10

Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopy

Yamaguchi, Hiroshi, Horikoshi, Yoshiji

Journal:

Physical Review B

Year:

1993

Language:

english

File:

PDF, 723 KB

english, 1993

11

Accelerated Life Test of AlGaAs–GaAs DH Lasers

Furukawa, Yoshitaka, Kobayashi, Takeshi, Wakita, Koichi, Kawakami, Tsuyoshi, Iwane, Genzo, Horikoshi, Yoshiji, Seki, Yasuo

Journal:

Japanese Journal of Applied Physics

Year:

1977

File:

PDF, 327 KB

1977

12

Lifetime of InGaAsP–InP and AlGaAs–GaAs DH Lasers Estimated by the Point Defect Generation Model

Horikoshi, Yoshiji, Kobayashi, Takeshi, Furukawa, Yoshitaka

Journal:

Japanese Journal of Applied Physics

Year:

1979

File:

PDF, 1007 KB

1979

13

Temperature Dependence of Ionization Coefficients for InP and 1.3 µm InGaAsP Avalanche Photodiodes

Takanashi, Yoshifumi, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1981

File:

PDF, 923 KB

1981

14

Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

Horikoshi, Yoshiji, Kawashima, Minoru, Yamaguchi, Hiroshi

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 524 KB

1986

15

Simultaneous Observation of RHEED Oscillation during GaAs MBE Growth with Modulated Electron Beam

Sugiura, Hideo, Kawashima, Minoru, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1986

File:

PDF, 831 KB

1986

16

Growth Mechanism of GaAs during Migration-Enhanced Epitaxy at Low Growth Temperatures

Horikoshi, Yoshiji, Kawashima, Minoru

Journal:

Japanese Journal of Applied Physics

Year:

1989

File:

PDF, 1.26 MB

1989

17

Misorientation in GaAs on Si Grown by Migration-Enhanced Epitaxy

Nozawa, Kazuhiko, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

1993

File:

PDF, 989 KB

1993

18

Negative Differential Resistance in InGaAs/InAlAs Nanoscale In-Plane Structures

Komatsuzaki, Yuji, Higashi, Kazuhiro, Kyougoku, Tomoteru, Onomitsu, Koji, Horikoshi, Yoshiji

Journal:

Japanese Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 231 KB

english, 2010

19

RHEED oscillation study by modulated electron beam during GaAs growth

Hideo Sugiura, Minoru Kawashima, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1987

Language:

english

File:

PDF, 360 KB

english, 1987

20

Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxy

Michio Sato, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 68 KB

english, 1988

21

Effect of precracking of organometallics and arsine on growth of GaAs

Michio Sato, Naoki Kobayashi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 357 KB

english, 1991

22

Phase transition on III-V compound semiconductor surfaces observed by an improved RHEED technique

Hiroshi Yamaguchi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 361 KB

english, 1993

23

Electron distribution in modulation doped AlGaAs/GaAs single quantum wells and inverted modulation doped GaAs/AlGaAs heterostructures

Kyoichi Suzuki, Ken Saito, Tadashi Saku, Akira Sugimura, Yoshiji Horikoshi, Syoji Yamada

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 305 KB

english, 1995

24

Unified model for first-order transition and electrical properties of InAs (001) surfaces based on atom-resolved scanning tunneling microscopy imaging

Hiroshi Yamaguchi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 366 KB

english, 1995

25

Evaluation of the highly coherent surface structure of the GaAs (411)A plane using scanning tunneling microscopy

Takumi Yamada, Hiroshi Yamaguchi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 278 KB

english, 1995

26

Effects of alloy composition on the As desorption from and adsorption on strained InxGa1−xAs surfaces

M.J. Ekenstedt, Hiroshi Yamaguchi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 417 KB

english, 1995

27

As desorption from GaAs and InAs surfaces studied by improved high-energy electron reflectivity measurements

Hiroshi Yamaguchi, Yoshiji Horíkoshi

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 192 KB

english, 1992

28

In-situ optical monitoring of the decomposition process of gaseous sources in metal-organic chemical vapor deposition and atomic layer epitaxy

Naoki Kobayashi, Yasuyuki Kobayashi, Yoshiharu Yamauchi, Yoshiji Horikoshi

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 420 KB

english, 1992

29

Surface processes in migration-enhanced epitaxy of III–V compound semiconductors

Yoshiji Horikoshi

Journal:

Applied Surface Science

Year:

1993

Language:

english

File:

PDF, 579 KB

english, 1993

30

In-situ monitoring of 1st-order phase transition on InAs(001) surfaces by scanning electron surface microscopy

Hiroshi Yamaguchi, Yoshikazu Homma, Yoshiji Horikoshi

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 1.40 MB

english, 1994

31

Mechanical and optical characteristics of Al-doped C60 films

Jiro Nishinaga, Tomoyuki Aihara, Hiroshi Yamagata, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 267 KB

english, 2005

32

Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

Koji Onomitsu, Hideo Fukui, Takashi Maeda, Yoshiro Hirayama, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 184 KB

english, 2005

33

Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer

Miki Fujita, Masanori Sasajima, Yuparwadee Deesirapipat, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2005

Language:

english

File:

PDF, 867 KB

english, 2005

34

Area selective epitaxy of GaAs with AlGaAs native oxide mask by molecular beam epitaxy

Ippei Yoshiba, Takayuki Iwai, Takahiro Uehara, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 521 KB

english, 2007

35

Characterization of heavily Sn-doped GaAs grown by migration-enhanced epitaxy

Tosaporn Chavanapranee, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 425 KB

english, 2007

36

Characteristics of multivalent impurity doped C60 films grown by MBE

Jiro Nishinaga, Tomoyuki Aihara, Atsushi Kawaharazuka, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 346 KB

english, 2007

37

ZnO epitaxial films grown by flux-modulated RF-MBE

Katsuya Hirano, Miki Fujita, Masanori Sasajima, Tomohiro Kosaka, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2007

Language:

english

File:

PDF, 267 KB

english, 2007

38

RHEED intensity oscillation of C60 layer epitaxial growth

Jiro Nishinaga, Atsushi Kawaharazuka, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 419 KB

english, 2009

39

Crystalline and electrical characteristics of C60-doped GaAs films

Jiro Nishinaga, Tomonori Takada, Takashi Hayashi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2009

Language:

english

File:

PDF, 350 KB

english, 2009

40

Selective growth of C60 layers on GaAs and their crystalline characteristics

Jiro Nishinaga, Masaaki Ogawa, Yoshiji Horikoshi

Journal:

Thin Solid Films

Year:

2004

Language:

english

File:

PDF, 274 KB

english, 2004

41

High resolution X-ray photoelectron spectroscopy of beta gallium oxide films deposited by ultra high vacuum radio frequency magnetron sputtering

Toshio Takeuchi, Hiroki Ishikawa, Norikazu Takeuchi, Yoshiji Horikoshi

Journal:

Thin Solid Films

Year:

2008

Language:

english

File:

PDF, 802 KB

english, 2008

42

Characteristics of Si and Be δ-codoped GaAs grown by MBE

Shun’ichi Yonekubo, Dai Ichiryu, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 116 KB

english, 2001

43

Substrate lattice constant effect on the miscibility gap of MBE grown InAsSb

Hiroyuki Miyoshi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 307 KB

english, 2001

44

Area selective epitaxy of anti-dot structure of GaAs by solid source MBE

Hiroyuki Hasegawa, Hiroaki Kuriyama, Masahiro Ito, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2001

Language:

english

File:

PDF, 232 KB

english, 2001

45

Sb surface segregation effect on the phase separation of MBE grown InAsSb

Hiroyuki Miyoshi, Ryo Suzuki, Hidetoshi Amano, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

2002

Language:

english

File:

PDF, 226 KB

english, 2002

46

Electronic properties of monolayer steps on GaAs (0 0 1) surfaces studied by scanning tunneling microscopy

Kiyoshi Kanisawa, Hiroshi Yamaguchi, Yoshiji Horikoshi

Journal:

Journal of Crystal Growth

Year:

1997

Language:

english

File:

PDF, 551 KB

english, 1997

47

Selenium doped high-index GaAs epilayers grown by molecular beam epitaxy

Eriko Sano, Yoshiro Hirayama, Yoshiji Horikoshi

Journal:

Microelectronics Journal

Year:

1997

Language:

english

File:

PDF, 296 KB

english, 1997

48

Effect of surface Ga accumulation on the growth of GaN by molecular beam epitaxy

Atsushi Kawaharazuka, Tadashi Yoshizaki, Takato Hiratsuka, Yoshiji Horikoshi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 200 KB

english, 2010

49

Electrical properties of C60 delta-doped GaAs and AlGaAs layers grown by MBE

Jiro Nishinaga, Takashi Hayashi, Kiyoshi Hishida, Yoshiji Horikoshi

Journal:

physica status solidi (c)

Year:

2010

Language:

english

File:

PDF, 237 KB

english, 2010

50

Negative differential resistance characteristics of nanoscale in-plane gate devices

Yuji Komatsuzaki, Kazuhiro Higashi, Tomoteru Kyougoku, Koji Onomitsu, Yoshiji Horikoshi

Journal:

physica status solidi (c)

Year:

2011

Language:

english

File:

PDF, 410 KB

english, 2011